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Original Articles

Hydrostatic pressure effect on electronic and magnetic states in R1−xDxMnO3 orthomanganites

Pages 467-470 | Received 05 May 2006, Published online: 02 May 2007
 

Abstract

The effect of applied pressure (up to 14 kbar) on the electrical resistivity and on electronic and magnetic transition temperatures was investigated in R1−x D x MnO3 orthomanganites for different carrier concentration ranges: hole-doped (x = 0.3, R = La, Nd, Pr, D = Ca, Sr), half-doped (x = 0.5, R = Pr, D = Sr) and electron-doped (x = 0.84, R = Pr, Eu, Gd, D = Ca). The applied pressure effect on stability of electronic and magnetic phases of R1−x D x MnO3 is compared to the internal pressure (⟨ r A⟩ variation) effect and is discussed on the basis of coexistence of different mechanisms of exchange and electron–phonon interactions.

Acknowledgements

The work was supported by the NATO-Linkage Grant CBP.MD.CLG. 981238 and by the Program of the Presidium of RAS N.3, P-09.

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