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Original Articles

Phase transition in multicomponent semiconductor Cd1−xMnxGeP2 under hydrostatic pressure up to 7 GPA

, , , , , & show all
Pages 387-390 | Received 22 May 2006, Published online: 02 May 2007
 

Abstract

Electrical resistivity and Hall coefficient in the samples of Cd1−xMnxGeP2, where x=0÷ 0.19, have been measured under hydrostatic pressures up to 5 GPa. All measurements were carried out at T=300 K. A dissociation of Cd1−xMnxGeP2 solid solution was observed and the formation of separated phases of CdP2 and Ge were found at P=3.2 GPa for the Mn fraction x<0.19. The further increase of Mn fraction stabilized a crystal structure and for the compound of Cd0.81Mn0.19GeP2 a reversible phase transition was observed at P=3.5 GPa.

Acknowledgements

The work has been carried out under the financial support of Russian foundation for basic research (Projects: No. 05-03-33068, No. 05-02-16608) and the project of RAS Presidium ‘Physics and mechanics of highly condensed matter and of the problem of inner structure of the Earth and planets’.

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