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Abstract
The dependencies of resistivity ρ and Hall coefficient R H on hydrostatic pressure up to 9 GPa have been investigated for the two semiconductor materials: CdSnAs2 and InAs. The series of CdSnAs2 samples has n∼ 1016 cm−3 (for those doped with Cu) and n∼ 1018 cm−3 (for undoped) of electron concentration. The InAs undoped sample has n∼ 1016 cm−3. For all CdSnAs2 samples, a polymorphous phase transition takes place at P∼ 4.2 GPa. This transition is accompanied with the decomposition of initial compound. In InAs, the polymorphous phase transition is reversible: after decompression the initial composition is the same. The analysis of ρ (P) in both CdSnAs2 and InAs, points out on the existence of quasi-localized energy levels deep in conduction band.
Acknowledgements
The work is carried out under the financial support of Russian foundation for basic research (Projects: No. 05-02-16608) and project of RAS Presidium ‘Physics and mechanics of highly condensed matter and of the problem of inner structure of the Earth and planets’.