Photoluminescence of InP/GaP quantum dots under extreme conditions

Abstract

We present here high-field magneto-photoluminescence experiments on self-assembled InP/GaP quantum dots under high pressure, at cryogenic temperature. We unveil and discuss a very low pressure coefficient (PC) for the direct exciton and the quenching of the strong luminescence at 1.2 GPa. In fact, the magneto-fingerprints, interpreted in the classic Fock–Darwin framework, give access to the evolution of charge carriers confinement and unravel an increase of the exciton effective mass, involved in the low effective PC.

Keywords:

• photoluminescence
• semiconductors
• quantum dots

Acknowledgements

The authors thank E. Arushanov and M. Goiran for fruitful discussions. Part of this work was supported by the EuroMagNET II program and the Consolider Ingenio 2010 MALTA project.