Electroluminescence and band structure in p-Al_xGa_1−xAs/GaAs_1−yP_y/n-Al_xGa_1−xAs under uniaxial compression

Abstract

Band structure calculations in p-Al _x Ga_1−x As/GaAs_1−y P _y /n-Al _x Ga_1−x As heterostructure under uni-axial compression in the 1 1 0 direction indicates an increase in the optical energy gap with dE _ph/dP ≈ 85 meV GPa⁻¹, a decrease in the quantum well barriers and light hole–heavy hole crossover at uniaxial stress P ≈ 450–500 MPa. The observed increase in electroluminescence intensity and photon energy shift under uni-axial compression are explained by numerical calculation data.

Keywords:

• uniaxial stress
• III–V semiconductor heterojunctions
• electroluminescence
• GaAsP quantum wells

Acknowledgements

This work was supported by RFBR grant no. 07-02-00866.