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High Pressure Research
An International Journal
Volume 3, 1990 - Issue 1-6
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A. Electron structures of solids

Pressure studies of deep levels in semiconductors

G. A. Samara Sandia National Laboratories Albuquerque, New Mexico, 87185, U.S.A.
Pages 3-5 | Published online: 01 Dec 2006
 
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Abstract

The effects of pressure on the energetics and kinetics of electron emission and capture processes by several important deep levels in Si are discussed. The results yield the first quantitative measures of the breathing mode lattice relaxations accompanying these processes.

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