Possibility of investigation the metastable donor states in ii-vi semiconductors under hydrostatic pressure

Abstract

The model of bistable donor centers was proposed for describing the metastable electron traps in cubic semiconductors. The detailed analysis of the model suggests that the bistable donors should be very common in II-VI semiconductors doped with VII group impurities. Under normal conditions the additional metastable states are degenerated with the conduction band. However, the analysis of the energy bands pressure coefficients for II-VI materials shows that under hydrostatic pressure the donor traps can change the electrical properties of the sample.

Key Words:

• Impurity and defect levels
• compound semiconductors
• electron-lattice interaction