DLTS investigation of GaP under hydrostatic pressure

W. Bala Institute of Physics, N. Copernicus University, 87–100, Torun, Poland

M. Grinberg Institute of Physics, N. Copernicus University, 87–100, Torun, Poland

S. Legowski Institute of Physics, N. Copernicus University, 87–100, Torun, Poland

H. Meczynska Institute of Physics, N. Copernicus University, 87–100, Torun, Poland

Abstract

Deep Level Transient Spectroscopy (DLTS) was applied to nitrogen related deep electron trap 0.4 eV in green emitting diodes of GaP under hydrostatic pressure. The pressure coefficient of the level energy is determinated as equal -31 meV/kbar with respect to the valence band edge.

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DLTS investigation of GaP under hydrostatic pressure

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DLTS investigation of GaP under hydrostatic pressure

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