Publication Cover
High Pressure Research
An International Journal
Volume 6, 1991 - Issue 6
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Original Articles

Electrical conductivity and thermal EMF of CsI at high pressures

Pages 349-356 | Received 22 Apr 1991, Published online: 30 Sep 2010
 

Abstract

The pressure dependence of thermal EMF and the resistivity-temperature dependence of CsI has been measured at pressures 20-50 GPa. In CsI non-monotonous change of resistivity, thermal EMF and activation energy of charge carriers has been observed at pressures above 40 GPa. The sign of thermal EMF corresponds to the electron conductivity. At pressures below 47 GPa the resistivity-temperature dependence is of the type characteristic of non-degenerate semiconductors, at pressure above 49 GPa it is characteristic of degenerate semiconductors (or metals). The observed properties are connected probably with the continuous distortion of B2 to an hcp-like phase.

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