Abstract
Comparison of phase transition criteria from several methods show the first high pressure transition in GaAs to be at 12 ± 1.5 GPa at 300 K. Among the various methods used: x-ray diffraction, optical transmittancy, EXAFS, H.R. electron microscopy, and Raman scattering, the latter is one of the most powerful to gain insight into several steps in the transition process.
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