High pressure solid state amorphization of Si, Ge and solid solutions Si:GaAs, Ge:GaSb

Abstract

The bulk amorphous tetrahedral semiconductors (Si, Ge. Si_0.89(GaAs)_0.11, Ge_1−x(GaSb)_x (0.12<X<I)) were obtained using solid state amorphization. The disordering process occurs at the decompression of high pressure phases Si II, Gell at low temperatures and of solid solutions Sill: GaAs, GeII: GaSb at room temperature. The structure and stability of the obtained phases were investigated