Semiconductor-to-metal transition in bulk amorphous gallium antimonide under high pressure

Abstract

The peculiarities of the semiconductor-to-metal transition in the case of tetrahedral-bonded amorphous semiconductor a-GaSb were investigated. The bulk disordered samples of gallium antimonide were obtained by solid state amorphization from high pressure phase. The metallization occurs at P∼3. 5–4 GPa and is accompanied by volume anomaly. Bulk modulus of amorphous semiconducting phase is less than that of crystalline modification. The transition to metallic state is interpreted by the gradual changes of amorphous network topology, which lead to significant structural reconstruction to more close packed phase at metallization pressure.