The peculiarities of the tunneling conductance and phonon induced features in tetrahedrically bonded semiconductors under pressure

Abstract

Summary The 30 kbar high pressure unit for low temperatures and the digital processing have been applied to the tunneling investigations of Ge and GaAs. The obtained results include the values of the mode Gruneisen constants for zone boundary phonons in <100> direction in Ge, the irregular optical phonons behavior in GaAs, the bistability of tunneling voltage-current curve for GaAs at elevated pressure and the observation of optically induced oscillations on the tunneling conductance of GaAs Schottky barrier. The semi-quantitative model involving the conductance band structure change under pressure and DX-centers in GaAs(Te) is used for the tentative explanation.