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Abstract
In this paper, a high-performance PIN diode single-pole-double-throw (SPDT) switch for W-band application is developed. By employing quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) technology, the cost of the switch is significantly reduced while maintaining performance and size with conventional MMIC counterpart. A 3-D PIN diode model is used to describe the diode characteristic under both forward and reverse biasing states. In order to alleviate parasitic parameters effect on performance of the switch, compensation structures are analyzed and adopted. The measurement results show the insertion loss is less than 2 dB from 82 to 100 GHz and the isolation is greater than 32 dB from 82 to 105 GHz. The total size of the SPDT switch is 2.1 mm × 4.3 mm.