https://orcid.org/0000-0002-3213-9993
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Abstract
In this article, a modified reltron was proposed. Here an asymmetrical radio frequency (RF) modulation cavity interaction structure was used which consists of three coupled cavities instead of two used in the conventional reltron. Hence, instead of three grids in its modulation cavity, the proposed modified reltron structure consists of four grids. This additional grid inside the modulation cavity: distributes the length of the modulation cavity asymmetrically, which helps to form tight and dense electron bunches within the device. The proposed structure was designed and simulated using a CST Studio Suite. For the optimized grid spacing, the results of the PIC simulation showed the modified reltron was able to produce ∼350 MW power at 2.75 GHz frequency which was ∼100 MW more than the reltron. With the typically selected device's electric parameters the device efficiency was also found ∼41.2 % which was ∼11 % higher than previously reported results.
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Notes on contributors
Prabhakar Tripathi
Prabhakar Tripathi received the BTech degree in Electronics and Communication Engineering from Uttar Pradesh Technical University, Lucknow, India, in 2009, and MTech degree in the Communication System from Graphic Era University, Dehradun, Uttarakhand, India, in 2011. He is currently pursuing a PhD degree in the Department of Electronics Engineering with the Indian Institute of Technology (Banaras Hindu University), Varanasi, India, under the Visvesvaraya PhD Scheme (VISPHD-MEITY- 217). His current research interests include Computational electromagnetics, Slow-wave structure, High Power Microwave sources, Metamaterial based HPM Source, Plasma filled HPM source and Metamaterial based applications.
Arjun Kumar
Arjun Kumar received the BTech degree in Electronics and Communication Engineering from Biju Patnaik University of Technology, Odisha, India, in 2013. He is currently pursuing the PhD degree in electronics engineering with Indian Institute of Technology (Banaras Hindu University), Varanasi, India. His current research interests include Computational electromagnetics, High Power Microwave Sources, Metamaterial based applications.
Smrity Dwivedi
Smrity Dwivedi received the BTech degree in Electronics and Communication Engineering from Uttar Pradesh Technical University, Lucknow, India, in 2005, and a PhD degree from IIT (BHU), Varanasi, India, 2013. She joined the Department of Electronics Engineering, IIT (Banaras Hindu University), Varanasi, as an Assistant Professor, in 2017. Her current research interests include modeling, simulation, and design of High-Power Microwave source, Conventional vacuum electronics devices, Metamaterial based applications, Plasmonics and Smart antennas for the new generation. Dr Dwivedi is a senior member of IEEE.
P. K. Jain
P. K. Jain received the BTech degree in electronics engineering and MTech and PhD degrees in microwave engineering from IIT (BHU), Varanasi, India, in 1979, 1981, and 1988, respectively. He has joined as a Lecturer in the Department of Electronics Engineering at the Institute of Technology (Banaras Hindu University) in 1981, and became Professor in the Year 2001. Presently, he is Director of the National Institute of Technology, Patna. He has vast experience of R&D in the area of RF and Communication engineering, microwave/millimeter-wave devices and circuits, high power microwave sources, Plasmonics, Metamaterial based applications. Dr Jain is a senior member of IEEE and also a fellow of the Institution of Electronics and Telecommunication Engineers, India.