Fabrication of ridge waveguide on the ion-implanted TGG crystal by femtosecond laser ablation

Abstract

The ridge waveguide on the TGG crystal has been fabricated through the combination of the ion implantation and the femtosecond laser ablation. Firstly, optical planar waveguide was formed on the top surface of TGG crystal by ion implantation. To investigate the damage induced by the 6.0 MeV Si ion implantation at a dose of 2.0 × 10¹⁵ ions/cm², the vacancy distribution was obtained by the SRIM simulation programme. Subsequently, the ridge waveguide with a width of 20 µm was produced by femtosecond laser ablation. The optical guiding properties of the ridge TGG waveguide were measured at the near-infrared wavelength (976 nm) by the end-face coupling technique. The work demonstrated that the manufactured waveguide structure possesses the ability to confine the light into guided mode, making it potentially valuable in integrated devices.

KEYWORDS:

• Ion implantation
• femtosecond laser ablation
• TGG crystal
• ridge waveguide
• near-field intensity distribution

Acknowledgements

This project is supported by the Postgraduate Research and Practice Innovation Program of Jiangsu Province (Grant No. SJCX19_0257), the National Natural Science Foundation of China (Grant No. 11405041).

Disclosure statement

No potential conflict of interest was reported by the authors.

Additional information

Funding

This work was supported by National Natural Science Foundation of China: [Grant Number 11405041].