The local-field corrective effect on Rabi oscillation of ultrashort pulse excitation in semiconductor GaAs

Abstract

The Rabi oscillation of the thin bulk semiconductor GaAs, which takes into account the effect of the local-field correction induced by the interacting excitons, is investigated by numerically solving the semiconductor Bloch equations. It is found, for a 2π few-cycle pulse excitation, that two incomplete Rabi-floppings emerge due to the competition between the Rabi frequency of the incident pulse and the internal-field matrices. Furthermore, for a sub-cycle 2π pulse excitation a complete Rabi-flopping can occur because of the absolute phase effect. We ascribe these characteristics of the Rabi oscillation to the renormalized Rabi frequency.

Keywords:

• Rabi oscillation; ultrashort pulse; absolute phase; exciton; local field

Acknowledgements

This work is supported by the National Natural Sciences Foundation of China (Grant 60478002) and the Key Basic Research Foundation of Shanghai (Grant 04JC14036).