Improvement of the homogeneity of optical thin films by ion-assisted deposition

Cheng-chung Lee Institute of Optical Sciences, National Central University, Chung-Li, Taiwan, 320, Republic of China; Y. Y. Liou is now with Department of Electrical Engineering, Chien Kuo College of Technology, Chang-Hua, Taiwan, 500, R.O.C.

Yeuh-Yeong Liou Institute of Optical Sciences, National Central University, Chung-Li, Taiwan, 320, Republic of China

Cheng-Chung Jaing Institute of Optical Sciences, National Central University, Chung-Li, Taiwan, 320, Republic of China

Abstract

The inhomogeneity of thin films of ZrO₂ and TiO₂ was reduced by ion beam bombardment with mixed argon and oxygen as a working gas during deposition. The inhomogeneities of the films were calculated from transmission monitoring curves. The optimum ion beam voltage and ion beam current density are 900 V and 12 μA cm⁻² for TiO₂ film.

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Improvement of the homogeneity of optical thin films by ion-assisted deposition

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