GaAs single crystals have been indented by a Vickers indenter at room temperature and 77 K. Dislocations thereby introduced were studied using the weak-beam method of electron microscopy. The dislocations have a Burgers vector of (a/2) d 110 ¢ and are dissociated into two Shockley partials. The stacking-fault energy decreases from 43 mJ m m 2 at 923 K to 15 mJ m m 2 at 77 K.
Philosophical Magazine Letters
Volume 83, 2003 - Issue 4
![Sample our Engineering & Technology journals, sign in here to start your access, latest two full volumes FREE to you for 14 days]({"type":"image" , "src" : "/sda/5933/TOC-Subject-Sample-2021-Engineering-Tech.jpg"})
Reprints and Corporate Permissions
Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?
To request a reprint or corporate permissions for this article, please click on the relevant link below:
Academic Permissions
Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?
Obtain permissions instantly via Rightslink by clicking on the button below:
If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.
Related Research Data
Enhanced glide of dislocations in gaas single crystals by electron beam irradiation
Source:
IOP Publishing
Electronic energy model for single Shockley stacking fault formation in 4H-SiC crystals
Source:
AIP Publishing
Dislocation configurations in semi-insulating, n-type and p-type GaAs deformed at 150°C
Source:
Informa UK Limited
Plan-view transmission electron microscopy observation of a crack tip in silicon
Source:
Informa UK Limited
On the mobility of partial dislocations in silicon
Source:
Informa UK Limited
The Elastic Constants of Crystals
Source:
Elsevier
High-stress deformation of GaAs
Source:
Informa UK Limited
Plastic deformation of GaAs single crystals as a function of electronic doping II: Low temperatures (20–300°C)
Source:
Informa UK Limited
Dislocations and plasticity in semiconductors. II. The relation between dislocation dynamics and plastic deformation
Source:
HAL CCSD
Plastic deformation of GaAs single crystals at room temperature and the influence of doping
Source:
Informa UK Limited
The structure of vitreous and liquid V2O5
Source:
Informa UK Limited
Anisotropic deformation behaviour of GaAs
Source:
Wiley
Stacking-Fault Energies of GaAs
Source:
Wiley
The dissociation of dislocations in GaAs
Source:
Informa UK Limited
A self-aligning microtensile setup: Application to single-crystal GaAs microscale tension–compression asymmetry
Source:
Cambridge University Press
Linking provided by
