Abstract
Thin films of cubic boron nitride were deposited on silica and Si substrates by inductively coupled radio-frequency plasma chemical vapour deposition (IPCVD) technique using a B2H6 + N2 + Ar gas mixture. Cubic phase formation was confirmed by glancing-angle X-ray diffraction studies, which showed reflections up to (311). Fourier-transform infrared (FTIR) spectra also indicated the predominantly cubic nature of the deposited films. The optical properties of the films were studied in the wavelength range 200–1000 nm. Both direct and indirect transitions were found to be present. Mechanical stress in the grain-boundary region of the films seems to contribute significantly to the optical absorption below the band gap. The intercrystalline barrier height (E b) and the trap state density (Q t ) were obtained from an analysis of the effects of grain boundaries on the optical properties of the samples.
Acknowledgement
One of the authors (S.K.) wishes to thank the CSIR, Govt. of India for awarding her a JRF during the execution of the work.