Single stacking faults in high-stress deformed semi-insulating GaAs

Abstract

Single intrinsic stacking faults in semi-insulating undoped GaAs have been studied by transmission electron microscopy. The crystals were deformed at room temperature by uniaxial compression and under hydrostatic pressure. It is shown that the stacking faults are produced by the dissociation of 60°(β) dislocations under very high stress (τ≃0·75 GPa). The partial dislocations bounding the stacking faults are systematically 30°(β) in character. These observations are consistent with the classification of mobilities of partial dislocations that had been previously established when studying deformation microtwins in the same material: 30°(β)<30°(α) <90°(α or β).