Non-dissociation of Lomer–Cottrell dislocations and 〈110〉{001} slip in silicon

A. Korner Institut für Festkörperphysik, Universitát Wien, A-1090, Boltzmanngasse 5, Vienna, Austria

M. Martinez-hernandez Laboratoire de Physique du Solide, Ecole des Mines, F-54042, Nancy, Cedex, France

A. George Laboratoire de Physique du Solide, Ecole des Mines, F-54042, Nancy, Cedex, France

H. O. K. Kirchner Institut für Festkörperphysik, Universitát Wien, A-1090, Boltzmanngasse 5, Vienna, Austria

Abstract

Two unexpected features have been revealed by transmission electron microscopy investigations of deformed silicon bicrystals: (a) slip of a/2 〈110〉 dislocations on {001} planes and (b) non-dissociation of Lomer–Cottrell dislocations formed by intersecting slip dislocations.

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Non-dissociation of Lomer–Cottrell dislocations and 〈110〉{001} slip in silicon

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Non-dissociation of Lomer–Cottrell dislocations and 〈110〉{001} slip in silicon

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