Properties of clustered interstitials in ion-implanted silicon: Comparison between a Monte Carlo simulation and x-ray diffraction measurements

Abstract

In this Letter a dynamical Monte Carlo method is used to calculate the strain induced in a silicon lattice by the disorder caused by ion implantation. The model is based on the prevailing role of clustered interstitials. Comparison with experiments shows that the disorder which survives spontaneous annealing is attributable to the few interstitial clusters formed within the cascade volume.