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Abstract
The hole drift mobility in a-Si:H p-i-n junction specimens has been investigated between 250 and 455 K. It is shown that effects associated with anomalous dispersion disappear above 360 K. In the range between 360 and 455 K results have been fitted to the multi-trapping transport model, making it possible to deduce the extended-state hole mobility μv. Assuming a temperature dependence of the form μv ∞ T −n (with n=0·5 and 1·0), analysis of the data leads to μv values between 0·4 and 0·8 cm2 V−1 s−1 at 295 K.