Surface polarity determination in 〈110〉-orientated compound semiconductors high-resolution electron microscopy

Abstract

Several distinctive image features in principle enable the polarity of 〈110〉-oriented compound semiconductors to be determined from high-resolution electron micrographs. In practice, knowledge of objective lens defocus and crystal thickness, and precise control of crystal and beam tilt, are generally required before unambiguous discrimination of crystal polarity is possible. Confirmation of surface polarity for a (1 × 1) reconstruction of a (110) CdTe surface observed profile imaging is reported.