In situ electric properties of Ag films deposited on rough substrates

Hong Zhou Department of Physics, China Jiliang University, 258 Xueyuan Street, Hangzhou 310018, P.R. China

Sen-Jiang Yu Department of Physics, China Jiliang University, 258 Xueyuan Street, Hangzhou 310018, P.R. China; Department of Physics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, Tongji University, 1239 Siping Road, Shanghai 200092, P.R. ChinaCorrespondence[email protected] [email protected]

Yong-Ju Zhang Department of Physics, Taizhou University, 605 Dongfang Street, Linhai 317000, P.R. China

Miao-Gen Chen Department of Physics, China Jiliang University, 258 Xueyuan Street, Hangzhou 310018, P.R. China

Zhi-Wei Jiao Department of Physics, China Jiliang University, 258 Xueyuan Street, Hangzhou 310018, P.R. China

Ping-Zhan Si Department of Physics, China Jiliang University, 258 Xueyuan Street, Hangzhou 310018, P.R. China

Abstract

Silver (Ag) films have been deposited on rough substrates (including frosted glass and silicone grease), and for comparison on flat glass, by DC-magnetron sputtering, and their sheet resistances measured in situ during deposition. It is found that the growth of Ag films proceeds through three distinct stages: discontinuous, semi-continuous, and continuous regimes. The sheet resistance on rough substrates jumps in the vicinity of the percolation threshold, whereas the resistance on flat substrates decreases monotonically during deposition. The abnormal in situ electric properties on rough substrates are well explained based on the differences of the growth mechanism and microstructure of Ag films on different substrates.

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Acknowledgments

This study was supported by the National Natural Science Foundation of China (grant nos 11204283, 11074227) and by the Zhejiang Provincial Natural Science Foundation (grant nos Y6090542, R6110362).

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In situ electric properties of Ag films deposited on rough substrates

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In situ electric properties of Ag films deposited on rough substrates

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