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Abstract
A practical method was developed to image detailed features of defects in a crystal using STEM. This method is essentially a STEM version of the conventional CTEM g/3g weak beam dark field (WBDF) method. The method was successfully applied to resolving individual Shockley partials of a dissociated dislocation in a Cu-6.44at.%Al alloy.
Disclosure statement
No potential conflict of interest was reported by the authors.