Defects in irradiated metallic (Au and Ag) and semiconducting (Si) targets simulated by molecular dynamics

Abstract

This study compares near-threshold disorder in irradiated metallic (Ag and Au) and semiconducting (Si) targets. The analysis is based on a molecular dynamics simulation method. Although the behaviour of f.c.c. metals complies with the classic interstitial model, significant differences are observed between Ag and Au. An effective damage yield at very low energies appears to be a prominent feature of Si.