APPLICATION OF SPECTRAL METHODS TO THERMAL ANALYSIS OF NANOSCALE ELECTRONIC DEVICES

Abstract

The transient thermal characteristics of nanoscale electronic devices operating at very high frequencies are studied by spectral methods. At such scales microscopic phenomena resulting from phonon collisions and phonon scattering become important. A device, consisting of an array of MOSFET transistors on silicon substrate, is considered as a test case. Thermal transport is represented by a reduced form of the Boltzmann transport equation: the thermal wave model or hyperbolic heat equation. The results indicate that spectral methods can be used effectively for the accurate prediction of the short-time transient effects in nanoscale devices. Such effects are amplified by a sharp increase in the operating voltage and the corresponding heat generation rate.