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Abstract
A three-dimensional time-dependent computational model is developed to simulate the melt flow and the dopant transport during the growth of Si1−x Ge x semiconductor crystals. The effect of static magnetic fields of different orientations on radial segregation of dopant is analyzed. It is observed that the flow oscillations are damped and flow becomes steady for both horizontal and vertical applied magnetic fields as the Hartman number increases. It is found that there is an optimum value of Hartman number for each Rayleigh number beyond which little or no improvement in uniformity of concentration can be obtained at the growth interface.