Numerical simulation of a practical chemical vapor deposition reactor

ABSTRACT

Numerical simulation was set up to study a rotating vertical impinging chemical vapor deposition (CVD) system for the fabrication of thin films. It has been becoming very costly for manufacturers to produce high potent thin films due to the excessive waste of materials and high energy costs. A numerical study can be used to model and optimize the CVD reactor to yield favorable operating conditions. A simple geometry consisting of a rotating susceptor and flow guide is considered. The study shows visually how the temperature changes as the carrier gases respond to the thermal transport, and the effects of rotation and buoyancy. Commercially available software is used, with modifications, and the results obtained are discussed in detail.

Nomenclature

Cp	=	specific heat
Di	=	diffusion coefficient
g	=	gravitational acceleration
h	=	enthalpy
j	=	mass diffusion flux
k	=	thermal conductivity
M	=	molecular weight
p	=	pressure
Sh	=	heat source
Q	=	volumetric flow rate
q	=	thermal energy input per unit area
Re	=	Reynolds number
T	=	temperature
t	=	time
V	=	velocity vector
β	=	volumetric thermal expansion coefficient
Φi	=	species concentration
ρ	=	density
ν	=	kinematic viscosity
	=	mole fraction
τ	=	shear stress

Nomenclature

Cp	=	specific heat
Di	=	diffusion coefficient
g	=	gravitational acceleration
h	=	enthalpy
j	=	mass diffusion flux
k	=	thermal conductivity
M	=	molecular weight
p	=	pressure
Sh	=	heat source
Q	=	volumetric flow rate
q	=	thermal energy input per unit area
Re	=	Reynolds number
T	=	temperature
t	=	time
V	=	velocity vector
β	=	volumetric thermal expansion coefficient
Φi	=	species concentration
ρ	=	density
ν	=	kinematic viscosity
	=	mole fraction
τ	=	shear stress

Acknowledgments

The authors acknowledge the discussions with Dr. J. Meng.