Abstract
In the chemical vapor deposition process, the objective is to grow a crystal film as fast as possible, while at the same time ensuring Us chemical uniformity and crystal graphic perfection, This paper studies the possible enhancement of diffusion-controlled mass transfer by rotating a cylindrical substrate, which is used in the manufacture of superconductor materials. To preserve the free-stream properties, a numerical technique bearing a strong conservation property is described. The solutions are validated against previously published data on the drag and lift coefficients for a rotating cylinder. The numerical inaccuracy associated with the use of the conventional weak conservation form of the Navier-Stokes equations in polar coordinates is shown to be around 15%. It is found that rotation has minor influence on the average mass transfer rate and it generally increases the uniformity of the transport process.