Nanometer Scale Electrical Characterization of Artificial Mesostructures

Abstract

In this article, we review advances in experimental techniques for the electrical characterization of artificial mesostructures from nanometer to micrometer size. As the scale of electronic devices is rapidly approaching the 100-nm benchmark, new tools are becoming necessary to study and characterize them. We are also at a point where new tools to fabricate these devices are becoming increasingly relevant. We discuss the various characterization techniques applicable to objects of this scale, with particular emphasis on scanned probe methods.

Keywords:

• nanoelectronics
• electronic devices
• electronic transport
• atomic force microscopy.