Deep Level Transient Spectroscopy of Defects in High-Energy Light-Particle Irradiated Si

Abstract

The authors review what has been learned concerning the electrical and annealing properties of point defects in high-energy electron or proton irradiated Si from deep level transient spectroscopy (DLTS). The authors have focused mainly on the properties of electron traps, and to a lesser extent on the properties of hole traps. In addition to an in-depth discussion of hydrogen-related defects in Si, this review article provides a brief tutorial on ion-solid interactions and the theory underlying DLTS. The authors also provide a few examples of the power of high resolution Laplace DLTS in analyzing radiation induced defects. The collection of results gathered in this article may provide the fundamental information for successful defect engineering in light-particle irradiated Si.

Keywords:

• deep level transient spectrosc opy
• defects
• silicons
• irradiation

ACKNOWLEDGMENTS

The authors are grateful for the financial support of the National Research Foundation, South Africa. PNKD also acknowledges the financial support of the Australian Research Council. The authors owe gratitude to Walter E. Meyer and Simone Weidmann for compiling the figures used in this article. The authors are also indebted to Prof. Tony Peaker for his much appreciated comments on the manuscript.