Molecular beam epitaxy-surface and kinetic effects

Abstract

Molecular beam epitaxy (MBE) is a refined form of vacuum evaporation in which atomic and molecular beams impinge on a heated substrate under ultra high vacuum conditions. The technique evolved from surface kinetic studies on GaAs (1) and Si(2) and was subsequently used to grow films for device purposes. Because of the two complementary aspects of its development, many of the processes controlling both growth and dopant incorporation in MBE are quite well understood.