Development of Oxidation Sources in Preparation of High-T_c Oxide Superconductor Thin Films Using the Molecular Beam Epitaxy Method

Abstract

Film preparation of oxide superconductors, mainly of the 1-2-3 (RBa₂Cu₃O_x) and Bi-containing (Bi-Sr-Ca-Cu-O) systems, by evaporation of either metals or metal compounds by low pressure is summarized, with a particular focus on the development of oxidation sources essential to the technique. Oxidizing reagents that enable the oxidation of metal evaporates to take place in high (0·1 to 10₋₃ Pa) or even ultra-high (<10₋₅ Pa) vacuum are summarized using the experiments of those who tried to apply the molecular beam epitaxy method to atomically controlled fabrication of thin films of the material, especially for device processing. The evaporation in various kinds of oxidizing atmosphere, including the simple method of in situ annealing of the metal layers in oxygen to the more advanced in situ preparation of the films with strong oxidizing reagents such as atomic oxygen, ozone, nitric oxide, etc. along with the thermochemistry of the oxidation of metals by low pressure with these reagents is reviewed.

Key Words:

• oxide superconductor films
• molecular epitaxy
• oxidation