Estimation of radiological properties of common ion implantation materials for different heavy ions

ABSTRACT

In the present work, the effective atomic number () and electron density () of some common ion implantation materials namely GaAs, Si₃N₄, SiO₂ and Glass systems (Boro-Silicate, Pb-Transparent, Soda Lime, Pyrex) were calculated in the kinetic energy region of 10 keV–10 MeV for various heavy ions for the first time. Variation in effective atomic number and electron density with kinetic energy has been studied and significant variations were noted. Also maximum and minimum variations in were observed for SiO₂ (16.82% for N ion) and GaAs (0.94% for As ion), respectively. In addition, projected range, longitudinal straggling (relative to range), lateral straggling (relative to range) and difference between longitudinal and lateral straggling of materials for relevant heavy ions were determined and compared with each other in continuous energy region. The effect of ion type for ion implantation with respect to radiological parameters was shown and discussed in the kinetic energy region of 10 keV–10 MeV. The reported data should be useful when implanting ions into these materials as they represent the interaction of ions with these materials in the continuous kinetic energy region.

KEYWORDS:

• Effective atomic number
• ion implantation
• charged particles
• electron density
• range

Disclosure statement

No potential conflict of interest was reported by the author.