Radiation hardness of Ge_{2}Sb_{2}Te_{5} thin films to 80 MeV Si ion irradiation

Abstract

We studied the effect of Si-ion irradiation on Ge${}_2$Sb${}_2$Te${}_5$ (GST) thin films. Amorphous GST thin films were irradiated with 80 MeV Si${}^{6+}$ ions and studied using XRD, FESEM and UV–Vis-NIR measurements. After irradiation, we observed a slight increase in the particle size and a decrease in the optical bandgap. No phase transition from amorphous to crystalline was observed. Calculations using SRIM software provided insight into the possible reasons for the observed effects of swift heavy ions on GST. These minute changes in optical and micro-structural properties suggested that GST thin films were quite stable and radiation tolerant under the effect of 80 MeV Si ion irradiation.

Keywords:

• Phase change materials
• swift heavy ions
• crystallization and SRIM

Acknowledgments

The author would like to acknowledge Pelletron group at IUAC, New Delhi, for their support during irradiation experiments.

Disclosure statement

No potential conflict of interest was reported by the author(s).

Additional information

Notes on contributors

Neetu Kanda

Ms. Neetu Kanda completed her M. Sc. (Physics) from Dr. B. R. Ambedkar National Institute of Technology, Jalandhar (NITJ). Presently, she is a research scholar in physics department at NITJ. She is working on phase change materials and on the effects of swift heavy ion irradiation on pure and doped GST thin films.

Anup Thakur

Dr. Anup Thakur is working as an Associate Professor (Physics) in the department of Basic and Applied Sciences, Punjabi University, Patiala. He has completed his M.Sc. (Physics Hons.) and Ph. D. (Physics) from Department of Physics, Panjab University, Chandigarh. He worked as a Post Doctorate Fellow at Pohang Accelerator Laboratory, POSTECH, S. Korea. Currently, he is working on chalcogenide phase change materials, transparent semiconducting oxides, and nanophosphors.

Fouran Singh

Dr. Fouran Singh is working as Scientist in the 'Materials Science Group' at Inter University Accelerator Centre, New Delhi. He has completed his M.Sc. (Physics) from Aligarh Muslim University, Aligarh and Ph. D. (Physics) from University of Paris-XI, Orsay, France. He is involved in multi-mode research in various fields of Condensed Matter Physics/Materials Science/Nanotechnology such as Photoluminescence, thermoluminescence, ionoluminacence, IR/Raman, wide band gap materials for optoelectronics/ photovoltaics, phase transition of materials, plasmonics, nanocomposites, nano-hybrids and defects in materials.

A. P. Singh

Dr. A. P. Singh works on the synthesis and characterization of materials using accelerators. His work is on diluted magnetic semiconductor, transparent conducting oxides, perovskites, chalcogenide glasses and other correlated electron systems. He is presently working as Assistant Professor in Department of Physics at Dr. B. R. Ambedkar National Institute of Technology, Jalandhar.