Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET

Abstract

SiC power MOSFETs were exposed to ⁷⁹Br, ⁶⁴Cu, and ⁴⁷Ti ions with different biases. After irradiation, the static parameters of the device did not change significantly. The oxide reliability is also not affected after ON-state irradiation. However, noticeable degradation of gate oxide reliability has been found after heavy-ion exposure with extremely low drain bias(50 V). The degradation is attributed to defects in the gate oxide. According to the analysis of the experimental results, the defects are caused by the high electric field induced by the partial SEGR effect during heavy-ion irradiation.

KEYWORDS:

• SiC MOSFET
• heavy ion irradiation
• partial SEGR
• ramp voltage stress

Disclosure statement

No potential conflict of interest was reported by the author(s).

Additional information

Funding

This work was supported by the National Natural Science Foundation of China [grant no. 11975305].

Notes on contributors

Xiaowen Liang

Xiaowen Liang received the B.S. degree from the University of Electronic Science and Technology of China, Chengdu, China, and the M.S. degree in Microelectronics and solid-state electronics from University of Chinese Academy of Sciences, Beijing, China. She is currently working toward the Ph.D. degree in the Laboratory of Solid State Radiation Physics, XinJiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Urumqi, China.

Jinghao Zhao

Jinghao Zhao received the B.S. degree from the Harbin Institute of Technology, Harbin, China, the M.S. degree in Microelectronics and solid-state electronics from University of Chinese Academy of Sciences, Beijing, China. He is currently working toward the Ph.D. degree at Department of Electrical Engineering-Advanced Integrated Sensing Lab, Katholieke Universiteit Leuven, Leuven, Belgium.

Qiwen Zheng

Qiwen Zheng received the Ph.D. from University of Chinese Academy of Sciences, Beijing, China. He is currently an Associate Professor in XinJiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Urumqi, China.

JiangWei Cui

Jiangwei Cui received the Ph.D. from University of Chinese Academy of Sciences, Beijing, China. She is currently a Professor in XinJiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Urumqi, China.

Sheng Yang

Sheng Yang received the M.S. degree in Microelectronics and solid-state electronics from University of Chinese Academy of Sciences, Beijing, China.

Baoshun Wang

Baoshun Wang received the M.S. degree in Microelectronics and solid-state electronics from University of Chinese Academy of Sciences, Beijing, China.

Dan Zhang

Dan Zhang is currently pursuing the Ph.D. degree in the Laboratory of Solid State Radiation Physics, XinJiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Urumqi, China.

XueFeng Yu

Xuefeng Yu received the B.S. degree from Lanzhou university . He is currently a Professor in XinJiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Urumqi, China.

Qi Guo

Qi Guo received the B.S. degree from Beijing Institute of Technology. He is currently a Professor in XinJiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Urumqi, China.