1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation

Abstract

This paper investigates the low frequency noise degradation of commercial Ultra-Thin Body and Buried oxide Fully Depleted Silicon on Insulator (UTBB FD-SOI) PMOSFETs are under Total Ionizing Dose (TID) irradiation. According to the experimental results, the 1/f noise of the conduction channel in studied transistors increases differently after irradiation. Based on the carrier number fluctuation (CNF) model with additional carrier mobility fluctuations (CMF), we expand the process of 1/f noise changes at the front and back gates in UTBB FD-SOI devices during TID irradiation. Moreover, the relationship between channel Width/Length ratio (W/L) and the 1/f noise normalized power spectral density at the front gate before and after TID irradiation is also discussed. The trend reducing W/L condition can alleviate 1/f noise degradation in transistors is consistent with the expended theory, which can be a practical reference to develop the UTBB FD-SOI radiation-hardening technology.

KEYWORDS:

• Total ionizing dose irradiation
• UTBB FD-SOI
• 1/f noise

PACS:

• 61.80.Ed
• 85.30.Tv
• 73.40.Qv
• 85.40.Qx

Disclosure statement

No potential conflict of interest was reported by the author(s).

Additional information

Funding

This work was supported by National Natural Science Foundation of China (grant nos. 12075313); Natural Science Foundation of Xinjiang Uygur Autonomous Region [grant nos. 2021D01E06]; Youth Innovation Promotion Association CAS.

Notes on contributors

Ruiqin Zhang

Ruiqin Zhang, male, is a doctoral student majoring in the space reliability of FD-SOI in Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences.

Qiwen Zheng

Qiwen Zheng, associate researcher of Chinese Academy of Sciences, research field related to radiation hardening of CMOS circuits and devices.

Wu Lu

Wu Lu, female, doctoral supervisor, the main research is the total dose radiation effect of microelectronic devices and IC.

Jiangwei Cui

Jiangwei Cui, female, graduated from the Automation Department of Xi'an University of Technology in 2006 and her PhD was gained from the University of the Chinese Academy of Sciences in 2012. At present, she is interested in the radiation reliability of SOI materials and devices and circuits.

Yudong Li

Yudong Li, researcher of Chinese Academy of Sciences, the main research field is radiation hardening of photo-electronic imaging devices.

Qi Guo

Qi Guo, researcher of Chinese Academy of Sciences, the research field involves radiation defects in solids and radiation hardening of micro-nano electronic devices.