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Abstract
The gamma radiation-induced defects in radiation intolerant and radiation tolerant Si/SiO2 were observed by electron spin resonance (ESR). The Pb and È defects appeared in radiation-intolerant Si/SiO2 after radiation, but only Pb defects appeared in radiation-tolerant Si/SiO2 before and after radiation. The experimental results showed that these defects were correlated with the way of oxidation, the dosage of 60Co radiation and the electrical bias field during radiation. The higher the radiation dosage, the higher the defect concentration. A quantitative relationship was found between defect concentration and radiation dosage. Besides, the △B (peak to peak) of Pb and È indicated that Pb is the defect with a slow electron spin relaxation time, while È is the defect with a fast electron spin relaxation time. Finally, the experimental results are explained qualitatively.
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Xi Congling
Xi Congling received her MS degrees at the Department of Measurement Technology and Instrumentation of Xi'an Shiyou University in 2004. Her research interest is optical communication technology. She is an associate Professor in Jiaxing University.
Liu Changshi
Liu Changshi received his MS degrees from Shanghai Institute of Applied Physics, Chinese Academy of Sciences in 1987. His research interest is concerned with the effects radiation on materials. He is a professor of Jiaxing University.