Quantitative comprehension the impact of MeV electron radiation and structure on luminescence performance of In_.53Ga0_.47As/InP and In_.22Ga_.78As/GaAs quantum well

Abstract

Analysis luminescence performance of optical devices via photoluminescence, PL, is important in its applications, especial the effect of radiation on PL. In this paper, the PL spectra of In_0.53Ga_0.47As/InP multilayer quantum wells and In_.22Ga_.78As/GaAs quantum well were measured before and after electron radiation, firstly. Then, the wavelength dependence of the PL intensity was fitted using an asymmetric peak model and the theoretical curve obtained shows reasonable agreement with experimental data well. The total number of emission photons was yielded by the integral of the asymmetric peak model over wavelength $({\int }_{{\lambda }_{min}}^{{\lambda }_{\text{max}}}PL(\lambda )\text{d}\lambda )$. The significance benefit is that the quantitative relationship between the total number of emission photons and layer number of In_.53Ga0_.47As/InP multilayer quantum were found. Moreover, the relationship between radiation fluency and total number of emission photons from PL of In_.22Ga_.78As/GaAs quantum well was mathematical obtained as major findings. As a result, the combination of an asymmetric peak model with its integral can largely expand the quantitatively control the influence of radiation on PL spectrum of functional materials.

KEYWORDS:

• Photoluminescence
• luminescence performance
• model
• optical devices
• fitting

Disclosure statement

No potential conflict of interest was reported by the author(s).

Additional information

Funding

The authors thank the funding support from National Natural Science Foundation of China (No. 61705091) and public welfare research project (financial support) of Jinxing, China (No.2020AY10006).

Notes on contributors

Liu Junxing

Liu Junxing received his PhD degrees from Shanghai University in 2019. His research interest is concerned with the effects radiation on materials and optical meta-materials. He is an associate professor of Jiaxing Nanhu University.

Liu Changshi

Liu Changshi received his MS degrees from Shanghai Institute of Applied Physics, Chinese Academy of Sciences in 1987. His research interest is concerned with the effects radiation on materials. He is a professor of Jiaxing University.