Effect of High Temperature—Pressure on Buried Silicon Dioxide in Simox and Soi Structures

Abstract

The effect of annealing at 1520–1570 K under high pressure (HP, up to 1.2GPa) on the structure of SiO₂ in oxygen implanted silicon (Si:O) and in silicon with buried SiO₂ layer (SOI) was investigated by TEM, X-Ray and FTIR methods. Depending on the implantation and treatment parameters, SiO₂ precipitates or continuous SiO₂ layers, sometimes with defects at the SiO₂/Si boundary, are created. A stress dependent shift of asymmetric stretching vibration mode associated with Si-O bonds towards lower frequencies is detected for SiO₂ in the HT—HP treated Si:O and SOI samples.

Keywords:

• Silicon
• Si:O
• SOl
• Hydrostatic pressure
• SiO₂
• Oxygen precipitate