EPR investigations on γ-irradiated 4-hydroxyacetophenone single crystals: an NLO material

Abstract

The single crystals of 4-hydroxyacetophenone (4HAP) were grown by the solution growth technique and characterized by X-ray diffraction, UV–VIS, FT-IR, and FT-Raman techniques. TGA–DTA analyses have also been carried out. Electron paramagnetic resonance spectra of γ-irradiated 4HAP were recorded and the spin Hamiltonian parameters were evaluated.

Keywords:

• EPR
• Radiation damage
• NLO

Acknowledgements

The authors thank Dr. K.C. Rustagi, Dr. S.C. Mehendale, and Mr. S.K. Tiwari, Laser Physics Division, Centre for Advanced Technology, Indore, India, for their help in SHG measurements.