Lithium implantation profiles in metals and semiconductors

Abstract

Lithium was implanted into various metals in the dose range of 10^14-16ions/cm² and at 50 to 300 keV. Depth distributions of lithium are recorded with a special nuclear reaction technique of extreme sensitivity, and the profile moments are deduced.

The agreement between theoretical predictions and experimental findings is in general good for the first moment (projected range). However, in this particular case of Li implantation, quite unusual deviations occur for the higher moments of the distributions; often they are found much broader than predicted. This is ascribed to secondary effects, as radiation or thermal induced diffusion, and/or channeling. Examples are given.