Studies of lattice positions and ranges of nitrogen, implanted into metals and A^IIIB^V crystals

Abstract

The nuclear reactions ¹⁵N(p,αγ)¹²C and ¹⁵N(p,α)¹²C were used to determine the location and depth distributions of the implanted ¹⁵N atoms in InP, InAs and InSb semiconductors. The behaviour of the implanted nitrogen atoms durings thermal treatment was also investigated. The yieldsof the ¹⁵N(p, αγ)¹²C reaction were measured to determine the projected range of ¹⁵N in A^IIIB^V. Nb. Ni, Zr Materials.

The universal relation between the modified reduced range and the average reduced energy has been obtained for A^IIIB^V compounds. Measured are the orientational and energy dependences of the γ-ray yield from the ¹⁵N(p, αγ)¹²C reaction excited by channeled protons in a Nb crystal. The obtained results show the shift of the maximum in the reaction yield distribution and the decrease ofthe full distribution width measured at half-maximum.