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Radiation Effects and Defects in Solids
Incorporating Plasma Science and Plasma Technology
Volume 115, 1990 - Issue 1-3
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Original Articles

30 keV to 2 MeV Boron implantation profiles in solids

D. Fink Hahn-Meitner-Inst., Glienickerstr. 100, D-100, Berlin, 39, Germany
,
L. Wang Hahn-Meitner-Inst., Glienickerstr. 100, D-100, Berlin, 39, Germany; On leave from Institute of Semiconductors, Academia Sinica, Beijing, China
,
J. P. Biersack Hahn-Meitner-Inst., Glienickerstr. 100, D-100, Berlin, 39, Germany
&
F. Jahnel Institut für Radiochemie, TU München, D-8046, Garching, Germany; HL PL 44 Siemens AG., Otto Hahn Ring 6, D-8000, München, 83, Germany
Pages 93-112 | Received 10 Dec 1988, Accepted 01 Jun 1990, Published online: 19 Aug 2006
 
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Abstract

Boron was implanted into several solids in the dose regime 1014 to 1016 ions/cm2 and at energies between some 10 keV and some MeV. Measurements of the corresponding depth distributions were performed by means of the 10B(n, α0)7Li(gnd) and 10B(n, α1)7Li∗(1st) nuclear reaction techniques with thermal neutrons, and by SIMS. The results are compared to theoretical predictions.

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