Publication Cover
Radiation Effects and Defects in Solids
Incorporating Plasma Science and Plasma Technology
Volume 116, 1991 - Issue 1-2
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Original Articles

Radiation dosimeter based on floating gate MOS transistor

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Pages 155-158 | Received 21 Nov 1989, Accepted 01 Oct 1990, Published online: 19 Aug 2006
 

Abstract

The influence of γ-ionizing radiation on floating gate (FG) MOS transistor (MOST) having a positively or negatively charged FG has been studied. It is shown that a transistor with negatively charged FG may be used for dosimetry measurements.

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