Study of fission fragments channeling in silicon monocrystals

Abstract

The research results of ²³⁵U fission fragments channeling in silicon semiconductor detectors of heavy ions are reported. The analysis of the pulse height defect enabled to obtain the experimental relationship between energy losses in silicon due to nuclear collisions and the energy of fission fragments in LSS-units. The experimental values obtained more than twice exceed the computed ones given by Heines and Whitehead based on Lindhard's theory.

Key Words:

• channeling
• fission fragment
• silicon crystals