Publication Cover
Radiation Effects and Defects in Solids
Incorporating Plasma Science and Plasma Technology
Volume 124, 1992 - Issue 2
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Section B: Crystal lattice defects and amorphous materials

Positron annihilation study of the annealing behaviour of alpha induced defects in tungsten

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Pages 215-221 | Received 01 Sep 1990, Published online: 19 Aug 2006
 

Abstract

Positron lifetime and Doppler broadening measurements have been performed on alpha-irradiated tungsten to study the evolution of defects during isochronal annealing from 100°C to 1050°C. Vacancy-impurity complexes dissociate at the earlier stages and release the vacancies. Monovacancies start migrating at 400°C. The vacancy clusters coarsen to form microvoids in the region from 350°C to 650°C and remain stable upto 750°C. Some of the clusters collapse into vacancy loops. Dislocation/vacancy loops and microvoids start annealing around 750°C. The role of impurities and grain boundaries on the annealing behaviour of the defects is also discussed.

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